OBSERVATION OF H-1 TUNNELING DIFFUSION IN CRYSTALLINE SI

H-1 diffusion in crystalline Si has been measured in the temperature r ange of 50-220 K. The temperature dependence of the diffusion coeffici ent follows a power law of the type D proportional to T-n, n = 5.6 +/- 0.3. D(H-1) values range between 10(-18)-10(-14) cm(2)/s up to about 200 K, where a transition to thermally activated diffusion is indicate d. The low-temperature transport mechanism is attributed to tunneling.