LASER-INDUCED ABLATION AND EPITAXIAL-GROWTH OF SNSE

Authors
TEGHIL R GIARDINIGUIDONI A MELE A PICCIRILLO S PIZZELLA G MAROTTA V
Citation
R. Teghil et al., LASER-INDUCED ABLATION AND EPITAXIAL-GROWTH OF SNSE, Thin solid films, 241(1-2), 1994, pp. 126-128
Citations number
8
Categorie Soggetti
Physics, Applied","Material Science","Physics, Condensed Matter
Journal title
Thin solid films → ACNP
ISSN journal
00406090
Volume
241
Issue
1-2
Year of publication
1994
Pages
126 - 128
Database
ISI
SICI code
0040-6090(1994)241:1-2<126:LAAEOS>2.0.ZU;2-H
Abstract
The ablation technique was applied to thin film deposition from SnSe p owders. A mechanism for epitaxial growth as characterized by X-rays an d scanning electron microscope analysis is suggested. Plume analysis o f the ablated material is also reported.