BACK-TO-BACK SUBSTRATE WAFER BONDING - A NEW APPROACH TO THE FABRICATION OF DOUBLE-SIDE COATED WAFERS

Authors
KOPPERSCHMIDT P KASTNER G HESSE D GOSELE UM LORENZ M
Citation
P. Kopperschmidt et al., BACK-TO-BACK SUBSTRATE WAFER BONDING - A NEW APPROACH TO THE FABRICATION OF DOUBLE-SIDE COATED WAFERS, Applied physics A: Materials science & processing, 64(2), 1997, pp. 211-212
Citations number
8
Categorie Soggetti
Physics, Applied
Journal title
Applied physics A: Materials science & processing → ACNP
ISSN journal
09478396
Volume
64
Issue
2
Year of publication
1997
Pages
211 - 212
Database
ISI
SICI code
0947-8396(1997)64:2<211:BSWB-A>2.0.ZU;2-9
Abstract
We present a novel method for fabrication of double side coated wafers by back-to-back Direct Wafer Bonding (DWB). Two 3 inch sapphire wafer s (R-cut) were coated each with YBa2Cu3O7-delta by laser ablation on o ne side. The wafers were then directly bonded with their uncoated side s together in a microcleanroom. Subsequent heating increased the bond energy up to energies sufficient for fabrication of hybrid devices wor king at cryogenic temperatures. TEM cross sections reveal direct conta ct of the two sapphire lattices.