OPTIMIZATION OF A-SI1-XCXH FILMS PREPARED BY ULTRAHIGH-VACUUM PLASMA-ENHANCED CHEMICAL-VAPOR-DEPOSITION FOR ELECTROLUMINESCENT DEVICES

Authors
DEMICHELIS F CROVINI G PIRRI CF TRESSO E AMATO G COSCIA U AMBROSONE G RAVA P
Citation
F. Demichelis et al., OPTIMIZATION OF A-SI1-XCXH FILMS PREPARED BY ULTRAHIGH-VACUUM PLASMA-ENHANCED CHEMICAL-VAPOR-DEPOSITION FOR ELECTROLUMINESCENT DEVICES, Thin solid films, 241(1-2), 1994, pp. 274-277
Citations number
20
Categorie Soggetti
Physics, Applied","Material Science","Physics, Condensed Matter
Journal title
Thin solid films → ACNP
ISSN journal
00406090
Volume
241
Issue
1-2
Year of publication
1994
Pages
274 - 277
Database
ISI
SICI code
0040-6090(1994)241:1-2<274:OOAFPB>2.0.ZU;2-5
Abstract
The correlation between the deposition conditions and the structural a nd optoelectronic properties of a-SiC:H were studied in order to obtai n optimized device-quality films. Two different sets of films were dep osited by plasma enhanced chemical vapour deposition, with and without H-2 dilution of the mixture of SiH4 + CH4 respectively. An improvemen t in the optoelectronic properties was observed: the H-2-diluted films show higher photoconductivity, sharper Urbach energy, reduced sub-ban d gap absorption and reduced CH(n) and SiH2 bond density with respect to undiluted films. The growth mechanisms were interpreted by means of chemical bonding configurations deduced from IR absorptance measureme nts.