PLASMA-ENHANCED CHEMICAL-VAPOR-DEPOSITION OF BORON-NITRIDE ONTO INP

A low temperature plasma enhanced chemical vapour deposition technique was used to grow thin boron nitride films on indium phosphide. The st arting materials were ammonia and borane-dimethylamine, the carrier ga s being pure hydrogen. The films were characterized by ellipsometry, X -ray photoelectron spectroscopy (XPS) and IR spectroscopy. The electri cal properties of the insulator-semiconductor interface were analysed by capacitance-voltage measurements and deep level transient spectrosc opy. The deposited layers were identified as being essentially boron n itride, in the hexagonal form, by XPS and IR measurements. Good capaci tance modulation was observed with a minimum interface state density d istribution of about 5 x 10(11) cm-2 eV-1.