CORRELATIONS BETWEEN PROCESS PARAMETERS, CHEMICAL-STRUCTURE AND ELECTRONIC-PROPERTIES OF AMORPHOUS HYDROGENATED GEXC1-X FILMS PREPARED BY PLASMA-ENHANCED CHEMICAL-VAPOR-DEPOSITION IN A 3-ELECTRODE REACTOR
J. Tyczkowski et al., CORRELATIONS BETWEEN PROCESS PARAMETERS, CHEMICAL-STRUCTURE AND ELECTRONIC-PROPERTIES OF AMORPHOUS HYDROGENATED GEXC1-X FILMS PREPARED BY PLASMA-ENHANCED CHEMICAL-VAPOR-DEPOSITION IN A 3-ELECTRODE REACTOR, Thin solid films, 241(1-2), 1994, pp. 291-294
A new type of reactor for plasma deposition activated by audio frequen
cy with three parallel electrodes is presented. The reactor was tested
for deposition of amorphous hydrogenated GexC1-x films from organoger
manium compounds. It was found that small changes of a coupling capaci
ty in the system can cause a step change in the electronic structure o
f deposited films. Such a change, however, was not manifested by the m
olecular structure and only monotonic changes of Ge content and cross-
linking were observed. The step change in the electronic structure was
attributed to the amorphous semiconductor-amorphous dielectric transi
tion.