CORRELATIONS BETWEEN PROCESS PARAMETERS, CHEMICAL-STRUCTURE AND ELECTRONIC-PROPERTIES OF AMORPHOUS HYDROGENATED GEXC1-X FILMS PREPARED BY PLASMA-ENHANCED CHEMICAL-VAPOR-DEPOSITION IN A 3-ELECTRODE REACTOR

A new type of reactor for plasma deposition activated by audio frequen cy with three parallel electrodes is presented. The reactor was tested for deposition of amorphous hydrogenated GexC1-x films from organoger manium compounds. It was found that small changes of a coupling capaci ty in the system can cause a step change in the electronic structure o f deposited films. Such a change, however, was not manifested by the m olecular structure and only monotonic changes of Ge content and cross- linking were observed. The step change in the electronic structure was attributed to the amorphous semiconductor-amorphous dielectric transi tion.