TRANSIENT OPTICAL REFLECTIVITY IN LAYERED SEMICONDUCTORS

Citation
A. Hasegawa et al., TRANSIENT OPTICAL REFLECTIVITY IN LAYERED SEMICONDUCTORS, Journal of luminescence, 58(1-6), 1994, pp. 234-236
Citations number
6
Categorie Soggetti
Optics
Journal title
ISSN journal
00222313
Volume
58
Issue
1-6
Year of publication
1994
Pages
234 - 236
Database
ISI
SICI code
0022-2313(1994)58:1-6<234:TORILS>2.0.ZU;2-Y
Abstract
The reflection dynamics of a subpicosecond optical pulse was investiga ted under the Brewster angle of incidence at the exciton resonance in the layered compound GaSe. The reflected pulse has a tail of a few pic osecond which follows the decay of the resonant polarization. A time o scillatory decay of the transient reflectivity was observed. This beha vior can be explained by quantum beats in the polarization decay of co herently excited singlet and triplet excitons.