Several versions of Mevva ion sources have been developed in our insti
tute since 1988. It operates in a pulsed mode with a pulse length of 1
.2 ms and a repetition rate of up to 50 pps. A time-averaged beam curr
ent of 10 or 50 mA has been extracted at 30-80 kV from Mevva IIA-H and
Mevva IIB, respectively. In order to develop surface modification of
materials by ion implantation we have constructed three kinds of Mevva
ion source implantation systems. High dose (3-5 X 10(17) cm-2) implan
tation with Ti, Ce, Y, and Ti+C, etc. has been carried out for improvi
ng the lifetime of metal cutting tools, relay contacts, dies, and some
sophisticated components.