DEVELOPMENT OF BROAD-BEAM ION SOURCES AT CSSAR

High-energy and intense beam current broad beam ion sources have been developed for ion implantation and dynamic recoil mixing at CSSAR. The sources can be operated over beam energy and current ranges of 3-120 keV and 5-70 mA, respectively. For sputter coating of thin films, a se ries of focusing beam ion sources with different structures has also b een developed. The energy and current range from 1-10 keV and 100-350 mA for different applications. For some applications, low-energy (belo w 100 eV) ion beams are required. CSSAR has developed a 6-cm-diam broa d beam ion source. The source can be operated at beam energy 10-70 eV, and the beam current 15-80 mA has been extracted. Typical structures and operational data are given for the sources mentioned above. Recent ly a new type of broad beam metal ion source (Electron Beam Evaporatio n Metal Ion Source EBE) is being studied. Ion beams of several kinds o f materials such as C, W, Ta, Mo, Cr, Ti, B, Cu, etc. have been extrac ted from the source. Typical operation conditions and ion yields are g iven in this paper.