CHARACTERIZATION OF A BERNAS ION-SOURCE FOR MULTIPLY-CHARGED ION-IMPLANTATION

Due to concerns about energy purity and reduced beam current, the use of multiply charged ions to achieve higher effective ion energies with a fixed acceleration potential has not been common for implantation u sers in the semiconductor industry. Energy purity is compromised prima rily by charge exchange in the implanter beamline, caused by neutral g as originating from the ion source extraction aperture. Beam current h as been an issue, since traditional implanter ion sources, such as the Freeman source, produce very limited currents of multiply charged spe cies. At low beam currents, the implanter is not economical to use, he nce the lack of commercial use of multiply charged ion implantation. I on sources that address these issues must also meet requirements for a dequate source lifetime, simplicity of operation (for computer control ) and maintenance, and low cost of ownership. This paper details beam energy purity and usable beam currents for a new medium current Bemas ion source as compared to a standard Freeman ion source. The results s how significant performance improvements, while also increasing the io n source lifetime.