TAMEK - SOURCES AND TECHNIQUES FOR HIGH-DOSE IMPLANTATION, ION-BEAM MIXING, AND ION-BEAM-ASSISTED DEPOSITION OF METAL-IONS

Unlike widely published sources MEVVA, since 1984 we have constructed vacuum arc ion sources of any hard electroconductive materials (like m etal or composites type-TiC, TiSiC, NiCrAlY, MoS, TiMoSi, WAlB, TiBNi) for modification of materials. The principle of Technological Acceler ator of Metal ion and Electron Kit-source TAMEK, provides realization of regimes mentioned in the title in each (or in any series) of a sequ ence of f = 50 Hz pulses: t = 300 mus, I(i) < 1 A, E(i) < 200 keV, dD( i) = 10(16) ion/cm2/min for implantation and t = 1000 mus, I(arc) < 20 00 A, dh = 50-200 nm/min for deposition and so realized, if you wish, ion implantation, deposition, mixing, ion-beam-assisted deposition of the same ions without switching off the source. The experimental data demonstrate the possibility of obtaining mutual mixed (10 X 90 at %) a lloyed layers up to 3 mum for time in t = 15 min at T = 100-degrees-C temperature surface, with structure improving (microhardness) inner la yer up to 50 mum in depth and possibility of further coating growth on the surface. This report presents a brief review of TAMEK principle d esign and its application for modification of constructed materials.