TEMPERATURE AND GATE BIAS EFFECTS ON GAMMA-IRRADIATED AL-GATE METAL-OXIDE-SEMICONDUCTOR TRANSISTORS

The annealing of irradiated Al-gate metal-oxide-semiconductor (MOS) tr ansistors at elevated temperature (115-degrees-C), without gate bias, for P-channel metal-oxide-semiconductor (PMOS) transistors, and with/w ithout gate bias (+9 V) for N-channel metal-oxide-semiconductor (NMOS) transistors, has been investigated. The experimental data obtained ar e analyzed in terms of physicochemical and electrophysical processes r esponsible for creation of gate oxide charge and interface traps, as w ell as their anneal. The decrease of positive charge density in irradi ated transistors during thermal annealing is caused by electrons tunne ling from the silicon into the oxide. The rate of neutralization of po sitive centers depends on the irradiation dose level.