A parametric study of the pattern transfer step in a trilevel resist s
ystem using oxygen-based plasmas has been performed using a distribute
d electron cyclotron resonance reactor with independent rf biasing. In
pure oxygen plasmas, critical dimension loss is always present. The m
echanisms most likely to be responsible for these defects during the p
attern transfer process are presented and discussed. A novel plasma et
ching process based on sidewall passivation by sulfur is proposed usin
g SO2/O2 mixtures. Perfect anisotropy with negligiable critical dimens
ion loss is obtained at room temperature.