RAMAN-SCATTERING SPECTROSCOPY OF 3C-SIC(111) HETEROEPITAXIAL FILMS

Raman scattering spectra of 3C-SiC films, grown heteroepitaxially on S i(111) substrates by chemical vapor deposition (CVD), were measured to obtain information on the relaxation mechanism of the internal stress of the 3C-SiC films. The internal stress is found to be relaxed by th e formation of the voids at the interface between 3C-SiC film and Si s ubstrate during the CVD process.