DAMAGE AND ITS RAPID THERMAL ANNEALING BEHAVIOR OF 1 MEV AR-ION-IMPLANTED SILICON()

The formation of the buried amorphous layer and its annealing behavior during rapid thermal annealing in 1 MeV Ar+-implanted (100) silicon a t a dose of 1 x 10(15) cm-2 have been investigated by cross-sectional transmission electron microscopy. Rutherford backscattering spectrosco py and the thermal-wave-modulated optical reflectance technique. The b uried amorphous layer is completely recovered, but forms a closure dis location at 675-degrees-C. The regrowth rate of solid phase epitaxy fr om the upper (closer to the surface) amorphous/crystalline (a/c) inter face is found to be higher than that from the lower (in the bulk) a/c interface. Closure dislocations coalesce into V-shaped dislocations wh ich are observed mainly in the upper regrown region and evolve into ex tended defects such as the dislocation loops and lines at higher tempe rature. However, they persist with the end-of-range dislocations even at the temperature of 1100-degrees-C.