SELECTIVE ETCHING OF GAAS FOR ZNSE BASED SURFACE-EMITTING LASERS

Authors
HONDA T YANASHIMA K KOYAMA F KUKIMOTO H IGA K
Citation
T. Honda et al., SELECTIVE ETCHING OF GAAS FOR ZNSE BASED SURFACE-EMITTING LASERS, JPN J A P 1, 33(2), 1994, pp. 1211-1212
Citations number
7
Categorie Soggetti
Physics, Applied
Journal title
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS → ACNP
Volume
33
Issue
2
Year of publication
1994
Pages
1211 - 1212
Database
ISI
SICI code
Abstract
We have demonstrated a selective etch process of removing a GaAs subst rate for the fabrication of ZnSe-based surface emitting lasers using t he PA etchant (NH3OH:H2O2:H2O=x:33:10) and employing a spray method. T he etch rate of a GaAs substrate was 3.7 mum/min with a preferential e tch rate ratio of over 20 against ZnSe layers. The surface of the ZnSS e layer after removal of a substrate was smooth enough to fabricate Zn Se-based surface emitting lasers.