INDUCED PHOTOVOLTAGE EFFECT ON BARRIER HEIGHT OF AU GAAS FROM PHOTOREFLECTANCE SPECTROSCOPY/

Authors
WANG DP SHEN TL
Citation
Dp. Wang et Tl. Shen, INDUCED PHOTOVOLTAGE EFFECT ON BARRIER HEIGHT OF AU GAAS FROM PHOTOREFLECTANCE SPECTROSCOPY/, JPN J A P 1, 33(3A), 1994, pp. 1253-1255
Citations number
15
Categorie Soggetti
Physics, Applied
Journal title
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS → ACNP
Volume
33
Issue
3A
Year of publication
1994
Pages
1253 - 1255
Database
ISI
SICI code
Abstract
Barrier height of Au/GaAs was measured at various temperatures from Fr anz-Keldysh oscillations (FKO) of photoreflectance spectroscopy. The t emperature dependence of the measured barrier height of Au/GaAs was ex plained by the theory of Hecht [Phys. Rev. B 41 (1990) 7918]. The phot oinduced voltage depends on the temperature and cannot be neglected in the low-temperature range.