ORGANOMETALLIC VAPOR-PHASE EPITAXIAL-GROWTH OF ALASXSB1-X FILMS USINGTERTIARYBUTYLARSINE

The deposition of AlAsxSb1-x films is studied systematically using an organometallic vapor phase epitaxy growth technique. It is found that the growth of AlAsSb films requires a low V/III ratio to enhance the i ncorporation of antimony into the solid. The composition of the alloy also depends strongly on the growth temperature. Experimental data sho ws that films grown at higher temperatures yield much higher AlSb cont ents in the AlAsxSb1-x alloys. This is contrary to the results reporte d for GaAsSb films. In our study, we are able to grow metastable AlAsx Sb1-x epitaxial films throughout the entire range of the solid composi tion for temperatures above 550-degrees-C.