IMPROVED CRYSTALLINE QUALITY OF MOLECULAR-BEAM EPITAXY-GROWN GAAS-ON-SI EPILAYER THROUGH THE USE OF LOW-TEMPERATURE GAAS INTERMEDIATE LAYER

Authors
PHUA CC CHONG TC LAU WS
Citation
Cc. Phua et al., IMPROVED CRYSTALLINE QUALITY OF MOLECULAR-BEAM EPITAXY-GROWN GAAS-ON-SI EPILAYER THROUGH THE USE OF LOW-TEMPERATURE GAAS INTERMEDIATE LAYER, JPN J A P 2, 33(3B), 1994, pp. 120000405-120000408
Citations number
14
Categorie Soggetti
Physics, Applied
Journal title
JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS → ACNP
Volume
33
Issue
3B
Year of publication
1994
Pages
120000405 - 120000408
Database
ISI
SICI code
Abstract
Improvements in crystalline quality of GaAs epilayers on Si have been achieved through the use of low-temperature (LT) GaAs intermediate.lay er grown at 230-degrees-C. The use of this LT-GaAs intermediate layer between the GaAs nucleation layer and the GaAs overlayer has improved the photoluminescence (PL) peak intensity by about five times, and red uced the GaAs (004) X-ray diffraction full width at half maximum (FWHM ) by 59 arcsecs. The PL results were subsequently confirmed by cathodo luminescence images