A NEW SI DOPING SOURCE FOR GAAS GROWTH BY MOLECULAR-BEAM EPITAXY

Authors
HORIKOSHI Y FAHY MR KAWASHIMA M FURUKAWA K FUJINO M MATSUMOTO N
Citation
Y. Horikoshi et al., A NEW SI DOPING SOURCE FOR GAAS GROWTH BY MOLECULAR-BEAM EPITAXY, JPN J A P 2, 33(3B), 1994, pp. 120000413-120000416
Citations number
14
Categorie Soggetti
Physics, Applied
Journal title
JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS → ACNP
Volume
33
Issue
3B
Year of publication
1994
Pages
120000413 - 120000416
Database
ISI
SICI code
Abstract
A new Si cluster material, tertiary-butyloctasilacubane (tBuSi)8, is u sed as an efficient Si doping source for molecular beam epitaxy of GaA s. The vapor pressure of this material varies according to an activati on energy of 1.51 eV. A Si concentration of 2 x 10(20) /cm3 is obtaine d at a Si cluster cell temperature of 210-degrees-C and a GaAs growth rate of 1 mum/h. Although the grown layers suffer from heavy carbon co ntamination from the Si cluster, this problem can be alleviated by inc reasing the substrate temperature.