VACANCY-TYPE DEFECT CLUSTERS IN DIAMOND GROWN FROM MOLTEN GRAPHITE ATHIGH-PRESSURES

Authors
OSHIMA R TOGAYA M HATTORI K
Citation
R. Oshima et al., VACANCY-TYPE DEFECT CLUSTERS IN DIAMOND GROWN FROM MOLTEN GRAPHITE ATHIGH-PRESSURES, JPN J A P 2, 33(3B), 1994, pp. 120000440-120000442
Citations number
7
Categorie Soggetti
Physics, Applied
Journal title
JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS → ACNP
Volume
33
Issue
3B
Year of publication
1994
Pages
120000440 - 120000442
Database
ISI
SICI code
Abstract
Substructures of a synthetic diamond grown from the melt of superheate d graphite at a high pressure of 18 GPa have been examined by transmis sion electron microscopy. Vacancy-type dislocation loops are observed, which are in contrast to interstitial-type dislocation loops in natur al diamonds previously reported. Cavities are also formed. The results suggest that quenched-in vacancies are condensed during rapid cooling from high temperatures to room temperature under high pressures.