STEP COVERAGE ANALYSIS FOR HEXAMETHYLDISILOXANE AND OZONE ATMOSPHERIC-PRESSURE CHEMICAL-VAPOR-DEPOSITION

Authors
FUJINO K EGASHIRA Y SHIMOGAKI Y KOMIYAMA H
Citation
K. Fujino et al., STEP COVERAGE ANALYSIS FOR HEXAMETHYLDISILOXANE AND OZONE ATMOSPHERIC-PRESSURE CHEMICAL-VAPOR-DEPOSITION, JPN J A P 2, 33(3B), 1994, pp. 120000473-120000475
Citations number
8
Categorie Soggetti
Physics, Applied
Journal title
JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS → ACNP
Volume
33
Issue
3B
Year of publication
1994
Pages
120000473 - 120000475
Database
ISI
SICI code
Abstract
Hexamethyldisiloxane (HMDSO) and ozone atmospheric pressure chemical v apor deposition (AP CVD) presents good step coverage. Silicon trench s tep coverage has been analyzed for this CVD using a one-dimensional ga s diffusion model. The calculated step coverage exhibited the best fit when the sticking probability of HMDSO molecules is 0.002, causing th e good step coverage. The gas phase concentration profiles were calcul ated using numerical simulation. The estimation of the rate-determinin g step indicated that HMDSO diffusion limited the CVD reaction rate an d HMDSO itself participated directly in film formation.