FREE-ELECTRON LASERS AND SEMICONDUCTOR PHYSICS - 1ST RESULTS ON NONLINEAR OPTICS, INTERFACES, AND DESORPTION

Authors
MCKINLEY JT ALBRIDGE RG BARNES AV BAUDAT PA CHEN GC COLUZZA C DAVIDSON JL DUPUY C GOZZO F ILLEGEMS M LANGUELL ML MARTIN D MORIERGENOUD F POLAVARAPU PL RUDRA A SMITH JF TUNCEL E YANG X UEDA A MARGARITONDO G TOLK N
Citation
Jt. Mckinley et al., FREE-ELECTRON LASERS AND SEMICONDUCTOR PHYSICS - 1ST RESULTS ON NONLINEAR OPTICS, INTERFACES, AND DESORPTION, Nuclear instruments & methods in physics research. Section A, Accelerators, spectrometers, detectors and associated equipment, 341(1-3), 1994, pp. 156-161
Citations number
31
Categorie Soggetti
Nuclear Sciences & Tecnology","Physics, Particles & Fields","Instument & Instrumentation",Spectroscopy
Journal title
Nuclear instruments & methods in physics research. Section A, Accelerators, spectrometers, detectors and associated equipment → ACNP
ISSN journal
01689002
Volume
341
Issue
1-3
Year of publication
1994
Pages
156 - 161
Database
ISI
SICI code
0168-9002(1994)341:1-3<156:FLASP->2.0.ZU;2-8
Abstract
During the past year, the broad tunability (1-10 mum) and megawatt pea k intensity made available by the Vanderbilt Free-Electron Laser opene d new and productive avenues to semiconductor research. This paper ove rviews three of these experimental areas: nonlinear optical absorption in germanium, photoabsorption at heterojunction interfaces with empha sis on highly accurate measurements of band-edge discontinuities, and finally resonant photodesorption/ablation.