EXCITE-PROBE FEL (CLIO) STUDY OF 2-PHOTON-INDUCED CARRIER DYNAMICS INNARROW-GAP SEMICONDUCTORS

Authors
MURDIN BN RANGELROJO R PIDGEON CR KIMMITT MF KAR AK JAROSZYNSKI DA ORTEGA JM PRAZERES R GLOTIN F HUTCHINGS DC
Citation
Bn. Murdin et al., EXCITE-PROBE FEL (CLIO) STUDY OF 2-PHOTON-INDUCED CARRIER DYNAMICS INNARROW-GAP SEMICONDUCTORS, Nuclear instruments & methods in physics research. Section A, Accelerators, spectrometers, detectors and associated equipment, 341(1-3), 1994, pp. 165-168
Citations number
20
Categorie Soggetti
Nuclear Sciences & Tecnology","Physics, Particles & Fields","Instument & Instrumentation",Spectroscopy
Journal title
Nuclear instruments & methods in physics research. Section A, Accelerators, spectrometers, detectors and associated equipment → ACNP
ISSN journal
01689002
Volume
341
Issue
1-3
Year of publication
1994
Pages
165 - 168
Database
ISI
SICI code
0168-9002(1994)341:1-3<165:EF(SO2>2.0.ZU;2-S
Abstract
In a previous paper measurements were reported of two-photon absorptio n (TPA) in the Darrow gap semiconductors InAs and InSb utilising the m id-infrared tunability of CLIO. An assumption had to be made concernin g the lifetime of the excited carriers in order to interpret the resul ts. We have now made a direct measurement of the lifetime of two-photo n-induced free holes in InAs and InSb using an excite-probe technique. We have measured the TPA coefficient over the entire range from one-p hoton to two-photon threshold, showing good agreement with a non-parab olic band model for the process.