PROBING TERAHERTZ ELECTRON DYNAMICS IN SEMICONDUCTOR NANOSTRUCTURES WITH THE UC SANTA-BARBARA FELS

Citation
Jp. Kaminski et al., PROBING TERAHERTZ ELECTRON DYNAMICS IN SEMICONDUCTOR NANOSTRUCTURES WITH THE UC SANTA-BARBARA FELS, Nuclear instruments & methods in physics research. Section A, Accelerators, spectrometers, detectors and associated equipment, 341(1-3), 1994, pp. 169-173
Citations number
14
Categorie Soggetti
Nuclear Sciences & Tecnology","Physics, Particles & Fields","Instument & Instrumentation",Spectroscopy
ISSN journal
01689002
Volume
341
Issue
1-3
Year of publication
1994
Pages
169 - 173
Database
ISI
SICI code
0168-9002(1994)341:1-3<169:PTEDIS>2.0.ZU;2-3
Abstract
The UCSB free electron lasers radiate quasi-cw tunable radiation from 120 GHz to 4.8 THz at the kilowatt power level. These lasers enable re searchers to probe high frequency nonlinear electron transport in stat e-of-the-art semiconductor nanostructures. The impact of this research could have important consequences in the fields of high frequency sem iconductor science and technology. Three experiments are described tha t demonstrate the application of FELs in exploring terahertz dynamics of semiconductor nanostructures: i) photon-assisted tunneling in a sem iconductor superlattice; ii) dynamical response of a resonant tunnelin g diode; and iii) saturation spectroscopy of a single square quantum w ell.