PHOTOLUMINESCENCE AS A PROBE OF THE INTERACTION OF INTENSE FAR-INFRARED RADIATION WITH SEMICONDUCTOR QUANTUM STRUCTURES

Authors
VANSON PC CERNE J SHERWIN MS ALLEN SJ SUNDARAM M TAN IH BIMBERG D
Citation
Pc. Vanson et al., PHOTOLUMINESCENCE AS A PROBE OF THE INTERACTION OF INTENSE FAR-INFRARED RADIATION WITH SEMICONDUCTOR QUANTUM STRUCTURES, Nuclear instruments & methods in physics research. Section A, Accelerators, spectrometers, detectors and associated equipment, 341(1-3), 1994, pp. 174-177
Citations number
9
Categorie Soggetti
Nuclear Sciences & Tecnology","Physics, Particles & Fields","Instument & Instrumentation",Spectroscopy
Journal title
Nuclear instruments & methods in physics research. Section A, Accelerators, spectrometers, detectors and associated equipment → ACNP
ISSN journal
01689002
Volume
341
Issue
1-3
Year of publication
1994
Pages
174 - 177
Database
ISI
SICI code
0168-9002(1994)341:1-3<174:PAAPOT>2.0.ZU;2-L
Abstract
At the UCSB free-electron laser we have realized a set-up to detect th e photoluminescence from semiconductor quantum structures while they a re irradiated with intense far-infrared radiation. The effect of the r adiation on both quantum wells and quantum-well wires has been identif ied with non-resonant carrier heating. The confined carriers in these structures have energy-level spacings in the far-infrared region of th e spectrum. The tunability of the free-electron laser therefore allows the study of resonant effects as well.