FREE-ELECTRON LASER-INDUCED BLEACHING OF THE INTERSUBBAND ABSORPTION IN SEMICONDUCTOR QUANTUM-WELLS

Authors
MURDIN BN HELM M PIDGEON CR GEERINCK KK HOVENYER N WENCKEBACH WT VANDERMEER AFG VANAMERSFOORT PW
Citation
Bn. Murdin et al., FREE-ELECTRON LASER-INDUCED BLEACHING OF THE INTERSUBBAND ABSORPTION IN SEMICONDUCTOR QUANTUM-WELLS, Nuclear instruments & methods in physics research. Section A, Accelerators, spectrometers, detectors and associated equipment, 341(1-3), 1994, pp. 178-180
Citations number
14
Categorie Soggetti
Nuclear Sciences & Tecnology","Physics, Particles & Fields","Instument & Instrumentation",Spectroscopy
Journal title
Nuclear instruments & methods in physics research. Section A, Accelerators, spectrometers, detectors and associated equipment → ACNP
ISSN journal
01689002
Volume
341
Issue
1-3
Year of publication
1994
Pages
178 - 180
Database
ISI
SICI code
0168-9002(1994)341:1-3<178:FLBOTI>2.0.ZU;2-O
Abstract
The intensity dependent intersubband absorption in GaAs/AlGaAs quantum wells with a subband separation smaller than the optical phonon energ y has been measured with a pulsed far infrared free electron laser (FE LIX). Complete bleaching of the absorption is observed at I = 100 kW/c m2. When fitted with a two-level system, the saturation intensity is f ound to be 10 kW/CM2, which corresponds to a characteristic time const ant of 1-2 ps. Possible interpretations are discussed in the situation of finite FEL pulse width.