EFFECT ON CHARGE COLLECTION AND STRUCTURE OF N-TYPE SILICON DETECTORSIRRADIATED WITH LARGE FLUENCES OF FAST-NEUTRONS

Authors
BOSETTI M FURETTA C LEROY C PENSOTTI S RANCOITA PG RATTAGGI M REDAELLI M RIZZATTI M SEIDMAN A TERZI G
Citation
M. Bosetti et al., EFFECT ON CHARGE COLLECTION AND STRUCTURE OF N-TYPE SILICON DETECTORSIRRADIATED WITH LARGE FLUENCES OF FAST-NEUTRONS, Nuclear instruments & methods in physics research. Section A, Accelerators, spectrometers, detectors and associated equipment, 343(2-3), 1994, pp. 435-440
Citations number
16
Categorie Soggetti
Nuclear Sciences & Tecnology","Physics, Particles & Fields","Instument & Instrumentation",Spectroscopy
Journal title
Nuclear instruments & methods in physics research. Section A, Accelerators, spectrometers, detectors and associated equipment → ACNP
ISSN journal
01689002
Volume
343
Issue
2-3
Year of publication
1994
Pages
435 - 440
Database
ISI
SICI code
0168-9002(1994)343:2-3<435:EOCCAS>2.0.ZU;2-C
Abstract
Float-Zone (FZ) silicon detectors have been irradiated with large fast neutrons fluences (up to 10(14) n/cm2). The charge collection efficie ncy (eff) dependence on the reverse bias voltage (V) and on the fluenc e (PHI) have been investigated. The charge collection dependence on V indicates that, after large neutron irradiation, the relation between charge carrier concentration and full depletion voltage does not obey any longer the standard equation for an unsymmetrical step junction. T he charge collection efficiency is found to have a logarithmic depende nce on PHI.