POSITION-DEPENDENT EXCITON-PHOTON MODE SPLITTING IN A MICROCAVITY

Exciton-photon mode interaction of In0.1Ga0.9As quantum wells (QWs) in a lambda/2 microcavity has been studied using classical linear disper sion theory. In a system consisting of a GaAs cavity with one QW surro unded by Al0.3Ga0.7As/AlAs and GaAs/AlAs Bragg reflectors grown by mol ecular beam epitaxy, the interaction is found to be strongest at the e nds of the cavity and is vanishing in the center of it. The behavior i n the center position is changed by inserting a second QW into the cav ity. Reflectance and photoluminescence measurements show modulation ef fects by QW absorption in accordance with the calculations.