RADIATION-HARD DESIGN FOR SOI MOS INVERTERS

Authors
FRANCIS P MICHEL C FLANDRE D COLINGE JP
Citation
P. Francis et al., RADIATION-HARD DESIGN FOR SOI MOS INVERTERS, IEEE transactions on nuclear science, 41(2), 1994, pp. 402-407
Citations number
9
Categorie Soggetti
Nuclear Sciences & Tecnology","Engineering, Eletrical & Electronic
Journal title
IEEE transactions on nuclear science → ACNP
ISSN journal
00189499
Volume
41
Issue
2
Year of publication
1994
Pages
402 - 407
Database
ISI
SICI code
0018-9499(1994)41:2<402:RDFSMI>2.0.ZU;2-W
Abstract
The total-dose hardness of MOS integrated circuits is usually improved by increasing the hardness of the individual transistors. In this pap er, we propose circuit design techniques that can further decrease the sensitivity of cells to radiation dose. This concept is applied to si mple cells (inverters) produced in both thin-film SOI and gate-all-aro und technologies.