The deposition of over 3 ML of silicon onto ordered surfaces of Si(111
)1 X 1-Pb and Si(111)(square-root 3 X square-root 3)R30-degrees-Pb (be
ta phase) has been studied by observation of the LEED patterns and I(V
) curves. Results show that for annealing temperatures as low as 50-de
grees-C the LEED I(V) curves after Si deposition are very similar to t
hose observed before deposition. Therefore it is concluded that the st
ructure of the surfaces before and after silicon deposition are likely
to be the same, and that Pb may have considerably reduced the tempera
ture required for epitaxial growth of Si on Si(111). It is also found
that further annealing to 300-degrees-C of the Si/Si(111)1 X 1-Pb syst
em produces the beta phase. This temperature is in agreement with the
Si(111)1 X 1-Pb to beta phase transition.