LEED I(V) STUDY OF THE SI PB SI(111) SYSTEM

Citation
H. Zhao et al., LEED I(V) STUDY OF THE SI PB SI(111) SYSTEM, Surface science, 309, 1994, pp. 645-649
Citations number
8
Categorie Soggetti
Chemistry Physical
Journal title
ISSN journal
00396028
Volume
309
Year of publication
1994
Part
B
Pages
645 - 649
Database
ISI
SICI code
0039-6028(1994)309:<645:LISOTS>2.0.ZU;2-C
Abstract
The deposition of over 3 ML of silicon onto ordered surfaces of Si(111 )1 X 1-Pb and Si(111)(square-root 3 X square-root 3)R30-degrees-Pb (be ta phase) has been studied by observation of the LEED patterns and I(V ) curves. Results show that for annealing temperatures as low as 50-de grees-C the LEED I(V) curves after Si deposition are very similar to t hose observed before deposition. Therefore it is concluded that the st ructure of the surfaces before and after silicon deposition are likely to be the same, and that Pb may have considerably reduced the tempera ture required for epitaxial growth of Si on Si(111). It is also found that further annealing to 300-degrees-C of the Si/Si(111)1 X 1-Pb syst em produces the beta phase. This temperature is in agreement with the Si(111)1 X 1-Pb to beta phase transition.