TEMPERATURE-DEPENDENT PHOTOELECTRON DIFFRACTION OF THE SI(001) SURFACE

Authors
FRAXEDAS J FERRER S COMIN F
Citation
J. Fraxedas et al., TEMPERATURE-DEPENDENT PHOTOELECTRON DIFFRACTION OF THE SI(001) SURFACE, Surface science, 309, 1994, pp. 775-780
Citations number
20
Categorie Soggetti
Chemistry Physical
Journal title
Surface science → ACNP
ISSN journal
00396028
Volume
309
Year of publication
1994
Part
B
Pages
775 - 780
Database
ISI
SICI code
0039-6028(1994)309:<775:TPDOTS>2.0.ZU;2-P
Abstract
A high energy photoelectron diffraction (XPD) study of Si(001) at diff erent temperatures reveals that at about 1400 K a surface phase transi tion occurs. It has been identified as being an incomplete melting tra nsition. The thickness of the liquid film is estimated to be about 2 a ngstrom (or two atomic layers) on the basis of single-scattering clust er calculations.