PHOTOELECTROCHEMICAL ETCHING OF N-GAAS(001) ELECTRODES STUDIED USING REFLECTANCE ANISOTROPY

Citation
Sr. Armstrong et al., PHOTOELECTROCHEMICAL ETCHING OF N-GAAS(001) ELECTRODES STUDIED USING REFLECTANCE ANISOTROPY, Surface science, 309, 1994, pp. 1028-1032
Citations number
13
Categorie Soggetti
Chemistry Physical
Journal title
ISSN journal
00396028
Volume
309
Year of publication
1994
Part
B
Pages
1028 - 1032
Database
ISI
SICI code
0039-6028(1994)309:<1028:PEONES>2.0.ZU;2-I
Abstract
We demonstrate here that the novel ''epioptic'' technique of reflectan ce anisotropy (RA) is capable of detecting in real time, variations in the optical anisotropy of an GaAs(001) electrode surface during anodi c oxidation in aqueous KCl solutions. A novel system is described in w hich the exciting probe laser beam also excites minority charge carrie rs (boles) in the n-type materials thus giving rise to the photoelectr ochemical oxidation reaction. The influence of the neutral additive py ridine upon the etching kinetics is described while the nature of the changes in surface structural anisotropy are discussed in terms of pos sible surface reconstruction in aqueous solution, the appearance of hi ghly oriented macroscopic etch features and the possible formation of oriented surface layers.