THE MULTILAYER GROWTH MODE IN THE EPITAXY OF AG ON AG(111) ANALYZED BY SPALEED

The morphology of atomically stepped hillocks formed during homoepitax ial growth on Ag(111) is analysed by SPALEED in the deposition range o f 0-20 monolayers (ML). At 220 K the inclination of the facets increas es linearly with coverage, with the terrace widths being corresponding ly reduced. Facets with (100)-like steps are preferred over those cont aining (111)-like steps resulting in a more triangular shape of the hi llocks. At room temperature the hexagonally shaped hillocks are larger owing to enhanced terrace widths. Moreover, the beginning interlayer diffusion limits the height of the hillocks to approximately 10 layers effecting a much slower reduction of the terrace widths after deposit ion of 3.7 ML.