MIDINFRARED IN1-XALXSB INSB HETEROSTRUCTURE DIODE-LASERS/

Authors
ASHLEY T ELLIOTT CT JEFFERIES R JOHNSON AD PRYCE GJ WHITE AM CARROLL M
Citation
T. Ashley et al., MIDINFRARED IN1-XALXSB INSB HETEROSTRUCTURE DIODE-LASERS/, Applied physics letters, 70(8), 1997, pp. 931-933
Citations number
27
Categorie Soggetti
Physics, Applied
Journal title
Applied physics letters → ACNP
ISSN journal
00036951
Volume
70
Issue
8
Year of publication
1997
Pages
931 - 933
Database
ISI
SICI code
0003-6951(1997)70:8<931:MIIHD>2.0.ZU;2-9
Abstract
Stimulated emission at 5.1 mu m was demonstrated from a broad area In1 -xAlxSb/InSb heterostructure diode laser grown by molecular beam epita xy. For a 5 mu s pulse and a 500 Hz repetition rate the threshold curr ent density was 1480 A cm(-2) at 77 K and the maximum operating temper ature was 90 K at a current density of 2680 A cm(-2). Maximum peak pow er output was estimated to be 28 mW per facet at 77 K and 4500 A cm(-2 ).