MODIFIED SUBSTRATE SPONTANEOUS EMISSION IN BROAD AREA SEMICONDUCTOR-LASERS

We observe modification of the spontaneous emission spectrum emitted t hrough the substrate of a quantum well semiconductor laser. The effect is driven by the proximity of the quantum well. active region to the p-side electrical contact of the device, representing an excellent exa mple of cavity quantum electrodynamics. Modification of the spontaneou s emission rate and spectrum can be substantial; it must be accounted for in order to infer modal gain or carrier heating phenomena in the d evice correctly. (C) 1997 American Institute of Physics.