ELECTRONIC-PROPERTIES OF OSMIUM DISILICIDE

Authors
FILONOV AB MIGAS DB SHAPOSHNIKOV VL DOROZHKIN NN BORISENKO VE LANGE H
Citation
Ab. Filonov et al., ELECTRONIC-PROPERTIES OF OSMIUM DISILICIDE, Applied physics letters, 70(8), 1997, pp. 976-977
Citations number
9
Categorie Soggetti
Physics, Applied
Journal title
Applied physics letters → ACNP
ISSN journal
00036951
Volume
70
Issue
8
Year of publication
1997
Pages
976 - 977
Database
ISI
SICI code
0003-6951(1997)70:8<976:EOOD>2.0.ZU;2-0
Abstract
Electronic property calculation of OsSi2 performed by the linear muffi n-tin orbital method within the local density approximation scheme has shown the material to be an indirect gap semiconductor with a gap val ue of 0.95 eV. A direct transition with appreciable oscillator strengt h at 1.14 eV is predicted. (C) 1997 American Institute of Physics.