EMISSION MECHANISMS AND BAND FILLING EFFECTS IN GAAS-ALGAAS V-GROOVE QUANTUM WIRES

Authors
TRIBE WR STEER MJ MOWBRAY DJ SKOLNICK MS FORSHAW AN ROBERTS JS HILL G PATE MA WHITEHOUSE CR WILLIAMS GM
Citation
Wr. Tribe et al., EMISSION MECHANISMS AND BAND FILLING EFFECTS IN GAAS-ALGAAS V-GROOVE QUANTUM WIRES, Applied physics letters, 70(8), 1997, pp. 993-995
Citations number
11
Categorie Soggetti
Physics, Applied
Journal title
Applied physics letters → ACNP
ISSN journal
00036951
Volume
70
Issue
8
Year of publication
1997
Pages
993 - 995
Database
ISI
SICI code
0003-6951(1997)70:8<993:EMABFE>2.0.ZU;2-3
Abstract
We present a study of emission mechanisms and band filling effects in GaAs-AlGaAs V-groove quantum wires. A comparison of surface emitted ph otoluminescence (PL) and electroluminescence (EL) spectra from a p-i-n junction structure shows enhanced quantum wire emission in EL compare d to FL. This behavior is discussed in terms of enhanced carrier captu re by the quantum wire for electrical injection into the structure. Wi th increasing forward bias current the quantum wire EL spectra exhibit subband filling and saturation effects. In addition to the ground sta te transition, at least three excited state related transitions are ob served. (C) 1997 American Institute of Physics.