LOW-TEMPERATURE PHOTOLUMINESCENCE MEASUREMENTS ON BORON AND HYDROGEN-IMPLANTED 6H-SIC

Authors
PEPPERMULLER C HELBIG R ROTTNER K SCHONER A
Citation
C. Peppermuller et al., LOW-TEMPERATURE PHOTOLUMINESCENCE MEASUREMENTS ON BORON AND HYDROGEN-IMPLANTED 6H-SIC, Applied physics letters, 70(8), 1997, pp. 1014-1016
Citations number
12
Categorie Soggetti
Physics, Applied
Journal title
Applied physics letters → ACNP
ISSN journal
00036951
Volume
70
Issue
8
Year of publication
1997
Pages
1014 - 1016
Database
ISI
SICI code
0003-6951(1997)70:8<1014:LPMOBA>2.0.ZU;2-Y
Abstract
We investigated the low temperature (T<2 K) photoluminescence (LTPL) e mission of 6H-SiC samples after implantation of either boron or boron together with hydrogen. After implantation of boron and annealing at 1 700 degrees C, we detected new LTPL emission at 4205 Angstrom. After i mplantation of hydrogen into the boron-implanted and annealed sample, another LTPL emission at 4183 Angstrom appeared. We interpret two addi tional peaks as vibrational modes of the 4183 Angstrom emission with e nergies of 86 and 118 meV. (C) 1997 American Institute of Physics.