FABRICATION OF N-TYPE NICKEL DOPED B5C1+DELTA HOMOJUNCTION AND HETEROJUNCTION DIODES

Authors
HWANG SD YANG K DOWBEN PA AHMAD AA IANNO NJ LI JZ LIN JY JIANG HX MCILROY DN
Citation
Sd. Hwang et al., FABRICATION OF N-TYPE NICKEL DOPED B5C1+DELTA HOMOJUNCTION AND HETEROJUNCTION DIODES, Applied physics letters, 70(8), 1997, pp. 1028-1030
Citations number
23
Categorie Soggetti
Physics, Applied
Journal title
Applied physics letters → ACNP
ISSN journal
00036951
Volume
70
Issue
8
Year of publication
1997
Pages
1028 - 1030
Database
ISI
SICI code
0003-6951(1997)70:8<1028:FONNDB>2.0.ZU;2-X
Abstract
We have successfully nickel doped a boron carbide (BSC) alloy film. Th e nickel doped boron-carbide (Ni-B5C1+delta) thin films were fabricate d from a single source carborane cage molecule and nickelocene [Ni(C5H 5)(2)] using plasma enhanced chemical vapor deposition, Nickel doping transforms the highly resistive undoped film from ap-type material to an n-type material. This has been verified from the characteristics of diodes constructed of Ni-B5C1+delta a on both n-type silicon and p-ty pe B5C. The homojunction diodes exhibit excellent rectifying propertie s over a wide range of temperatures. (C) 1997 American Institute of Ph ysics.