SELF-ORGANIZATION PHENOMENA DURING POROUS SILICON FORMATION

Citation
Av. Prokaznikov et al., SELF-ORGANIZATION PHENOMENA DURING POROUS SILICON FORMATION, Solid state communications, 90(4), 1994, pp. 217-221
Citations number
20
Categorie Soggetti
Physics, Condensed Matter
Journal title
ISSN journal
00381098
Volume
90
Issue
4
Year of publication
1994
Pages
217 - 221
Database
ISI
SICI code
0038-1098(1994)90:4<217:SPDPSF>2.0.ZU;2-E
Abstract
In the system of electrolyte (hydrofluoric acid - HF-48 %)-silicon (ph osphorus doped, specific resistivity is equal to 4.5 OMEGA.cm) the sel f-organization phenomena were discovered and investigated which are de veloped during the pores formation and show themselves in formation of periodic concentric structures of closepacked array of pores of two k inds: circular and radial. Experimentally obtained current-potential c haracteristic is S-formed. The surface of porous silicon, which was fo rmed by different conditions, is investigated.