RAMAN-SCATTERING OF STRAINED GAAS-LAYERS GROWN BY MOVPE ON INP (111) A AND B

Authors
GENNARI S LOTTICI PP ATTOLINI G PELOSI C
Citation
S. Gennari et al., RAMAN-SCATTERING OF STRAINED GAAS-LAYERS GROWN BY MOVPE ON INP (111) A AND B, Solid state communications, 90(5), 1994, pp. 291-294
Citations number
24
Categorie Soggetti
Physics, Condensed Matter
Journal title
Solid state communications → ACNP
ISSN journal
00381098
Volume
90
Issue
5
Year of publication
1994
Pages
291 - 294
Database
ISI
SICI code
0038-1098(1994)90:5<291:ROSGGB>2.0.ZU;2-Z
Abstract
Epitaxial layers of GaAs grown by Metal Organic Vapor Phase Epitaxy on InP (111) A and B polar substrates have been investigated by Raman sc attering. The tensile strain, mainly due to the lattice mismatch betwe en GaAs and InP, has been evidenced by the red shifts of both the TO a nd LO GaAs phonons. From these shifts approximate values of the parall el strain have been obtained using phonon deformation potential parame ters. With identical growth conditions and times, larger growth rates are found for A than for B samples.