Vs. Vavilov, THE PECULIARITIES OF THE PHYSICS OF WIDE BAND-GAP SEMICONDUCTORS AND THEIR APPLICATIONS, Uspehi fiziceskih nauk, 164(3), 1994, pp. 287-296
One usually regards the semiconductors, for which the bandgap exceeds
approximately 2 eV, as the ''wide bandgap'' family. These materials ha
ve different nature of chemical bonds and crystal structure. However,
electronic and optical phenomena inside the family exhibit several sim
ilar qualities. Among the wide bandgap semiconductor family: diamond,
silicon carbide SiC, gallium phosphide GaP, cadmium sulfide CdS and it
s relatives in the 11 VI group seem to have a special place. With the
progress of optoelectronics and other fields of practical applications
, in particular high-temperature devices and detectors of high energy
photons and charged particles, the interest towards wide bandgap semic
onductors increases. In the present review, taking as an example a lim
ited number of the better understood substances from the family of the
wide bandgap semiconductors, the author discusses typical features of
the electronic processes and structural changes initiated, first of a
ll, by a high level of excitation of their electronic ''subsystem'', a
nd by the existence of the centers of carriers' localization with deep
energy levels.