SYNTHESIS AND INFRARED-ABSORPTION CHARACTERISTICS OF BORON-DOPED SEMICONDUCTING DIAMOND THIN-FILMS

Boron-doped semiconducting diamond films were synthesized by the therm al filament CVD technique, using acetone as a carbon source and trioxi de (B2O3) as an impurity source. The infrared absorption spectra of un doped and boron-doped diamond films are reported. The experimental res ults show that the absorption peaks at 0.308 and 0.341 eV are the firs t and second excited state respectively, arising from a common ground in B atoms in diamond films. These results have confirmed that the B a toms in diamond films are in substitutional position.