SELF-COMPENSATION OF ELECTRICALLY ACTIVE IMPURITIES BY INTRINSIC DEFECTS IN IV-VI SEMICONDUCTORS

Authors
KAIDANOV VI NEMOV SA RAVICH YI
Citation
Vi. Kaidanov et al., SELF-COMPENSATION OF ELECTRICALLY ACTIVE IMPURITIES BY INTRINSIC DEFECTS IN IV-VI SEMICONDUCTORS, Semiconductors, 28(3), 1994, pp. 223-237
Citations number
39
Categorie Soggetti
Physics, Condensed Matter
Journal title
Semiconductors → ACNP
ISSN journal
10637826
Volume
28
Issue
3
Year of publication
1994
Pages
223 - 237
Database
ISI
SICI code
1063-7826(1994)28:3<223:SOEAIB>2.0.ZU;2-W
Abstract
The current state of the problem of self-compensation in narrow-gap IV -VI semiconductors is reviewed. A systematic theory for self-compensat ion is presented for the cases of compensation by single vacancies, by charged binary complexes, and by neutral complexes. Experimental resu lts on self-compensation are analyzed for the cases in which various d onor and acceptor dopants are added to PbS, PbSe, PbTe, the narrow-gap solid solutions Pb0.8Sn0.2Te and Pb0.93Sn0.07Se, and films of lead ch alcogenides.