QUASI-BALLISTIC INSTABILITY IN INP STRUCTURES

Authors
KARAVAEV GF TKACHENKO EA UIMANOV EV
Citation
Gf. Karavaev et al., QUASI-BALLISTIC INSTABILITY IN INP STRUCTURES, Semiconductors, 28(3), 1994, pp. 252-256
Citations number
7
Categorie Soggetti
Physics, Condensed Matter
Journal title
Semiconductors → ACNP
ISSN journal
10637826
Volume
28
Issue
3
Year of publication
1994
Pages
252 - 256
Database
ISI
SICI code
1063-7826(1994)28:3<252:QIIIS>2.0.ZU;2-9
Abstract
The temperature dependence of the amplitude of the current oscillation s during the quasiballistic instability in InP structures has been stu died by the particle-simulation method. It is shown that current oscil lations can be observed at temperatures of about 60 K and below if ele ctrons are injected into the active n-type region across the heterojun ction.