REDISTRIBUTION OF BERYLLIUM IN INSB AND INAS RESULTING FROM ION-IMPLANTATION AND SUBSEQUENT ANNEALING

Secondary-ion mass spectrometry has been used to study the concentrati on profiles of beryllium resulting from implantation of 200-eV Be+ ion s in InSb and InAs at a dose of 10(15) cm-2, followed by annealing. Du ring annealing of InSb samples at temperatures up to 450-degrees-C, th ere is no redistribution of the beryllium. In InAs, in contrast with I nSb, the beryllium concentration profile is modified substantially by an annealing above 400-degrees-C. In the temperature interval 750-800- degrees-C, a gettering layer arises in the InAs after the implantation of Be+ ions. This layer arises in a region near the projected range R (p) as the result of a redistribution of defects generated during the bombardment. This layer acts as a sink for diffusing beryllium.