SHIFT OF THE ELECTROLUMINESCENCE PEAK IN 6H-SIC-BASED DIODES WITH THEFORWARD CURRENT-DENSITY

Authors
ANIKIN MM KUZNETSOV NI LEBEDEV AA POLETAEV NE STRELCHUK AM SYRKIN AL CHELNOKOV VE
Citation
Mm. Anikin et al., SHIFT OF THE ELECTROLUMINESCENCE PEAK IN 6H-SIC-BASED DIODES WITH THEFORWARD CURRENT-DENSITY, Semiconductors, 28(3), 1994, pp. 270-273
Citations number
9
Categorie Soggetti
Physics, Condensed Matter
Journal title
Semiconductors → ACNP
ISSN journal
10637826
Volume
28
Issue
3
Year of publication
1994
Pages
270 - 273
Database
ISI
SICI code
1063-7826(1994)28:3<270:SOTEPI>2.0.ZU;2-2
Abstract
A study has been made of the electroluminescence and DLTS spectra of p -n structures made from SiC by sublimation epitaxy. These structures c ontain two deep centers which have been observed previously: the i cen ter (E(upsilon) + 0.52 eV) and the D center (E(upsilon) + 0.58 eV). Th e position of the peak in the electroluminescence spectrum of the p-n structures and the dependence of this position on the forward current density are determined by the ratio of the concentrations of i and D c enters in the structure.