DEEP-CENTER CURRENT SPECTROSCOPY IN P-N STRUCTURES BASED ON 6H-SIC WITH AN INTERNAL FIELD

This study was based on 6H-SiC photodiodes with a nonuniformly doped n -type base. One deep capture center for electrons and seven for holes were observed. The profile of the concentration of the uncompensated i mpurity in the n-type base of the diode is determined by the presence of deep centers: HK2 (E(upsilon) + 0.276 eV, sigma(p) = 1.3 X 10(-15) cm2) and HK3 (E(upsilon) + 0.306 eV, sigma(p) = 8.5 X 10(-17) cm2). Th e centers are apparently structural defects. It is possible that the H K1 center which is observed (E(upsilon) + 0.223 eV, sigma(p) = 3.6 X 1 0(-12) cm2) is associated with the Al impurity.