CHARACTERISTICS OF ELECTRON-BOMBARDED P-N-JUNCTIONS IN THE AVALANCHE-BREAKDOWN REGION

The current-voltage characteristic of diffused-alloy silicon p-n junct ions and their properties under avalanche-breakdown conditions have be en studied in the temperature range 77-300 K at electron bombardment f luxes in the range 1 X 10(11)-5 X 10(17) cm-2. The energy of the elect rons was E = 4 MeV. The results are reported. A stepped, S-shaped curr ent-voltage characteristic forms at T < 150 K. This characteristic is associated with a charge exchange of divacancy and E-center levels dur ing the breakdown of the bombarded p-n junctions. The total noise curr ent at the bombarded p-n junction was found to increase at temperature s corresponding to the onset of a relaxation delay of the breakdown.